| PART |
Description |
Maker |
| OIS-180880 OIS-180880-X-T |
Series 180 - 0805 lower height IR high intensity 880 nm
|
OSA Opto Light GmbH
|
| IRF640 RF1S640SM FN1585 |
18A, 200V, 0.180 Ohm,, N-Channel PowerMOSFET(18A, 200V, 0.180 Ohm,N娌??澧?己?????OS?烘?搴??)
From old datasheet system
18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
|
INTERSIL CORP
|
| RE030 |
1.75V to 2.1V. rated for loads up to 180 mA in full power mode and 5 mA in low power mode. It is designed to be integrated with other analog cells
RE030 is a dual mode Low Drop Out (LDO) voltage regulator macrocell with programmable output voltage ranging from 1.75V to 2.1V, rated for loads up to 180 mA in full power mode and 5 mA in low power mode. It is designed to be integrated wi
|
Atmel
|
| H-81-4TNC H-81-4 H-81-4BNC H-81-4N H-81-4SMA H814 |
180 Two-Way Power Divider 5 - 1000 MHz
180Two-Way Power Divider 51000 MHz
180 Two-Way Power Divider 5 - 1000 MHz 180双向功分5 - 1000兆赫
|
MACOM[Tyco Electronics]
Amphenol, Corp.
|
| E9300B E9300A E9300H E9301A E9301B E9301H |
E9300B E-Series Average Power Sensor
E9300A E-Series Average Power Sensor
E9300H E-Series Average Power Sensor
E9301A E-Series Average Power Sensor
E9301B E-Series Average Power Sensor
E9301H E-Series Average Power Sensor
|
Agilent (Hewlett-Packard)
|
| FSL13A0R4 FSL13A0D FSL13A0D1 FSL13A0D3 FSL13A0R FS |
9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 9 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
9A/ 100V/ 0.180 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| 2SB1317P |
15 A, 180 V, PNP, Si, POWER TRANSISTOR
|
PANASONIC CORP
|
| EL2002ACN EL2002C EL2002CM EL2002CN |
Low Power 180 MHz Buffer Amplifier
Low Power, 180 MHz Buffer Amplifier
|
ELANTEC[Elantec Semiconductor]
|
| 2N6796 |
8A, 100V, 0.180 Ohm, N-Channel Power MOSFET
|
Fairchild Semiconductor
|
| IRFF130 |
8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET
|
New Jersey Semi-Conductor P...
|
